Analog Electronics

5.

Bipolar Junction Transistors

5.1.

Transistor Structure and Operation

5.1.1.

Physical Structure

5.1.1.1.

5.1.1.2.

5.1.2.

Terminal Identification

5.1.2.1.

5.1.2.2.

5.1.2.3.

5.1.3.

Operating Regions

5.1.3.1.

5.1.3.2.

5.1.3.3.

Saturation Region

5.1.4.

Junction Biasing

5.1.4.1.

Emitter-Base Junction

5.1.4.2.

Collector-Base Junction

5.2.

BJT Characteristics and Parameters

5.2.1.

Input Characteristics

5.2.2.

Output Characteristics

5.2.3.

5.2.3.1.

Common-Emitter Current Gain (β)

5.2.3.2.

Common-Base Current Gain (α)

5.2.4.

5.2.5.

Maximum Ratings

5.2.5.1.

Voltage Ratings

5.2.5.2.

Current Ratings

5.2.5.3.

5.3.

BJT Biasing Circuits

5.3.1.

Purpose of DC Biasing

5.3.2.

Fixed-Bias Configuration

5.3.3.

Emitter-Bias Configuration

5.3.4.

Voltage-Divider Bias Configuration

5.3.5.

Collector-Feedback Configuration

5.3.6.

5.3.6.1.

Stability Factors

5.3.6.2.

Temperature Effects

5.3.6.3.

Thermal Runaway

5.4.

Small-Signal Analysis

5.4.1.

AC Equivalent Circuit

5.4.2.

Small-Signal Models

5.4.2.1.

Hybrid-π Model

5.4.2.2.

5.4.3.

Small-Signal Parameters

5.4.3.1.

Transconductance

5.4.3.2.

Input Resistance

5.4.3.3.

Output Resistance

5.5.

BJT Amplifier Configurations

5.5.1.

Common-Emitter Amplifier

5.5.1.1.

5.5.1.2.

Input Impedance

5.5.1.3.

Output Impedance

5.5.1.4.

Phase Relationship

5.5.2.

Common-Collector Amplifier

5.5.2.1.

5.5.2.2.

Input Impedance

5.5.2.3.

Output Impedance

5.5.2.4.

5.5.3.

Common-Base Amplifier

5.5.3.1.

5.5.3.2.

Input Impedance

5.5.3.3.

Output Impedance

5.5.3.4.

5.6.

BJT as a Switch

5.6.1.

Switching Operation

5.6.2.

Saturation and Cutoff States

5.6.3.

Switching Times

5.6.4.

Logic Circuit Applications

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6. Field-Effect Transistors