Electronic Devices and Circuits

2.

Semiconductor Physics

2.1.

Atomic Structure and Crystal Lattices

2.1.1.

2.1.1.1.

Bohr Model of the Atom

2.1.1.2.

Energy Levels and Electron Shells

2.1.2.

Chemical Bonding in Semiconductors

2.1.2.1.

Covalent Bonding

2.1.2.2.

Silicon Crystal Structure

2.1.2.3.

Germanium Crystal Structure

2.1.3.

Crystal Lattice Properties

2.1.3.1.

Unit Cell Structure

2.1.3.2.

Crystal Defects and Impurities

2.1.3.3.

Lattice Vibrations

2.2.

Energy Band Theory

2.2.1.

Formation of Energy Bands

2.2.1.1.

2.2.1.2.

Conduction Band

2.2.1.3.

Forbidden Energy Gap

2.2.2.

Band Gap Characteristics

2.2.2.1.

Direct and Indirect Band Gaps

2.2.2.2.

Temperature Effects on Band Gap

2.2.3.

2.2.3.1.

Definition and Significance

2.2.3.2.

Fermi-Dirac Distribution

2.3.

Intrinsic Semiconductors

2.3.1.

Pure Silicon and Germanium

2.3.2.

Carrier Generation and Recombination

2.3.2.1.

Thermal Generation

2.3.2.2.

Recombination Processes

2.3.3.

Intrinsic Carrier Concentration

2.3.3.1.

Temperature Dependence

2.3.4.

Conductivity of Intrinsic Semiconductors

2.4.

Charge Carriers in Semiconductors

2.4.1.

Electrons as Charge Carriers

2.4.1.1.

Electron Movement in Conduction Band

2.4.1.2.

Electron Mobility

2.4.2.

Holes as Charge Carriers

2.4.2.1.

Hole Concept and Movement

2.4.2.2.

2.4.3.

Effective Mass of Carriers

2.5.

Extrinsic Semiconductors

2.5.1.

Doping Process and Purpose

2.5.2.

N-type Semiconductors

2.5.2.1.

Donor Impurities

2.5.2.2.

Phosphorus and Arsenic Doping

2.5.2.3.

Majority and Minority Carriers

2.5.2.4.

Donor Energy Levels

2.5.3.

P-type Semiconductors

2.5.3.1.

Acceptor Impurities

2.5.3.2.

Boron and Aluminum Doping

2.5.3.3.

Majority and Minority Carriers

2.5.3.4.

Acceptor Energy Levels

2.5.4.

Carrier Concentration in Doped Semiconductors

2.5.4.1.

Mass Action Law

2.5.4.2.

Compensation Doping

2.6.

Carrier Transport Mechanisms

2.6.1.

2.6.1.1.

Electric Field Effects

2.6.1.2.

Carrier Mobility

2.6.1.3.

Conductivity and Resistivity

2.6.2.

Diffusion Current

2.6.2.1.

Concentration Gradient Effects

2.6.2.2.

Diffusion Coefficient

2.6.2.3.

Fick's Laws of Diffusion

2.6.3.

Einstein Relation

2.6.3.1.

Relationship between Mobility and Diffusion

2.6.4.

Continuity Equation

2.6.4.1.

Carrier Conservation

2.6.4.2.

Generation-Recombination Effects

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3. The p-n Junction Diode