Microelectronic Circuits

4.

Bipolar Junction Transistors

4.1.

BJT Structure and Operation Principles

4.1.1.

Physical Structure

4.1.1.1.

Three-Layer Construction

4.1.1.2.

Base Width Importance

4.1.1.3.

Doping Profile Effects

4.1.2.

NPN Transistor Operation

4.1.2.1.

Current Flow Mechanisms

4.1.2.2.

Emitter Injection Efficiency

4.1.2.3.

Base Transport Factor

4.1.2.4.

Collector Collection Efficiency

4.1.3.

PNP Transistor Operation

4.1.3.1.

Complementary Operation

4.1.3.2.

Current Directions

4.1.3.3.

Voltage Polarities

4.2.

BJT Operating Modes

4.2.1.

Active Mode Operation

4.2.1.1.

Forward-Active Region

4.2.1.2.

Current Amplification

4.2.1.3.

Linear Operation Region

4.2.2.

Saturation Mode

4.2.2.1.

Both Junctions Forward-Biased

4.2.2.2.

Collector-Emitter Saturation Voltage

4.2.2.3.

Switching Applications

4.2.3.

4.2.3.1.

Both Junctions Reverse-Biased

4.2.3.2.

Leakage Currents

4.2.3.3.

Off-State Operation

4.2.4.

Reverse Active Mode

4.2.4.1.

Inverted Operation

4.2.4.2.

Reduced Current Gain

4.3.

BJT Characteristics and Parameters

4.3.1.

Current-Voltage Relationships

4.3.1.1.

Ebers-Moll Model

4.3.1.2.

Current Gain Parameters

4.3.1.3.

4.3.2.

Input and Output Characteristics

4.3.2.1.

Base-Emitter Characteristics

4.3.2.2.

Collector Characteristics

4.3.2.3.

Load Line Analysis

4.3.3.

Temperature Effects

4.3.3.1.

VBE Temperature Coefficient

4.3.3.2.

Current Gain Variation

4.3.3.3.

Thermal Runaway

4.4.

BJT Biasing Techniques

4.4.1.

Fixed Bias Configuration

4.4.1.1.

Circuit Analysis

4.4.1.2.

Stability Problems

4.4.1.3.

Design Limitations

4.4.2.

Emitter Bias Configuration

4.4.2.1.

Emitter Degeneration

4.4.2.2.

Improved Stability

4.4.2.3.

Design Procedure

4.4.3.

Voltage Divider Bias

4.4.3.1.

Bias Network Design

4.4.3.2.

Stability Analysis

4.4.3.3.

Design Trade-offs

4.4.4.

Bias Stability Analysis

4.4.4.1.

Stability Factors

4.4.4.2.

Temperature Compensation

4.5.

BJT Small-Signal Analysis

4.5.1.

Small-Signal Models

4.5.1.1.

Hybrid-π Model

4.5.1.2.

4.5.1.3.

Model Parameter Extraction

4.5.2.

Small-Signal Parameters

4.5.2.1.

Transconductance

4.5.2.2.

Input Resistance

4.5.2.3.

Output Resistance

4.5.2.4.

4.6.

BJT Amplifier Configurations

4.6.1.

Common-Emitter Amplifier

4.6.1.1.

Voltage Gain Analysis

4.6.1.2.

Input and Output Impedance

4.6.1.3.

Frequency Response

4.6.1.4.

Phase Relationships

4.6.2.

Common-Collector Amplifier

4.6.2.1.

Emitter Follower Operation

4.6.2.2.

Voltage Buffering

4.6.2.3.

High Input Impedance

4.6.2.4.

Low Output Impedance

4.6.3.

Common-Base Amplifier

4.6.3.1.

Current Gain Characteristics

4.6.3.2.

High Frequency Performance

4.6.3.3.

Low Input Impedance

4.7.

BJT Switching Applications

4.7.1.

Switching Characteristics

4.7.1.1.

4.7.1.2.

4.7.1.3.

4.7.2.

Switching Circuit Design

4.7.2.1.

Saturation Prevention

4.7.2.2.

Speed-Up Techniques

4.7.3.

Digital Logic Applications

4.7.3.1.

TTL Logic Families

4.7.3.2.

ECL Logic Families

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