Power Electronics

2.

Power Semiconductor Devices

2.1.

Ideal Switch Characteristics

2.1.1.

Perfect On-State Behavior

2.1.2.

Perfect Off-State Behavior

2.1.3.

Instantaneous Switching

2.1.4.

Zero Power Loss

2.2.

Real Switch Characteristics

2.2.1.

On-State Voltage Drop

2.2.2.

Leakage Current

2.2.3.

Switching Transients

2.2.4.

2.2.5.

Safe Operating Area

2.3.

2.3.1.

Structure and Operation

2.3.1.1.

PN Junction Physics

2.3.1.2.

Carrier Transport Mechanisms

2.3.1.3.

Drift and Diffusion Regions

2.3.2.

Static Characteristics

2.3.2.1.

Forward Bias Operation

2.3.2.2.

Reverse Bias Operation

2.3.2.3.

Breakdown Mechanisms

2.3.2.4.

Temperature Effects

2.3.3.

Dynamic Characteristics

2.3.3.1.

Forward Recovery Process

2.3.3.2.

Reverse Recovery Process

2.3.3.3.

Switching Speed Limitations

2.3.4.

Types of Power Diodes

2.3.4.1.

General Purpose Diodes

2.3.4.2.

Fast Recovery Diodes

2.3.4.3.

Schottky Diodes

2.3.4.4.

Silicon Carbide Diodes

2.4.

2.4.1.

Silicon Controlled Rectifier

2.4.1.1.

Four-Layer PNPN Structure

2.4.1.2.

Two-Transistor Model

2.4.1.3.

Triggering Mechanisms

2.4.1.4.

Holding and Latching Current

2.4.1.5.

Turn-On Process

2.4.1.6.

Turn-Off Process

2.4.1.7.

Commutation Methods

2.4.2.

Gate Turn-Off Thyristor

2.4.2.1.

Structure and Operation

2.4.2.2.

Turn-Off Capability

2.4.2.3.

Applications and Limitations

2.4.3.

2.4.3.1.

Bidirectional Structure

2.4.3.2.

Quadrant Operation

2.4.3.3.

Gate Triggering

2.4.4.

2.4.4.1.

Breakover Characteristics

2.4.4.2.

Triggering Applications

2.5.

Power Transistors

2.5.1.

2.5.1.1.

Structure and Physics

2.5.1.2.

Current Gain Characteristics

2.5.1.3.

Switching Behavior

2.5.1.4.

Secondary Breakdown

2.5.1.5.

Safe Operating Area

2.5.2.

2.5.2.1.

Vertical Structure

2.5.2.2.

Gate Control Mechanism

2.5.2.3.

Body Diode Effects

2.5.2.4.

Switching Characteristics

2.5.2.5.

Temperature Coefficients

2.5.2.6.

Safe Operating Area

2.5.3.

2.5.3.1.

Hybrid Structure Design

2.5.3.2.

Conductivity Modulation

2.5.3.3.

Switching Performance

2.5.3.4.

Latch-Up Prevention

2.5.3.5.

Safe Operating Area

2.5.3.6.

Comparison with Other Devices

2.6.

Wide Bandgap Devices

2.6.1.

Silicon Carbide Devices

2.6.1.1.

Material Properties

2.6.1.2.

Device Characteristics

2.6.2.

Gallium Nitride Devices

2.6.2.1.

Material Properties

2.6.2.2.

Device Characteristics

2.7.

Device Protection

2.7.1.

Overvoltage Protection

2.7.1.1.

Snubber Circuits

2.7.1.2.

Transient Voltage Suppressors

2.7.1.3.

Clamping Circuits

2.7.2.

Overcurrent Protection

2.7.2.1.

Current Limiting

2.7.2.2.

Fusing Techniques

2.7.2.3.

Electronic Protection

2.7.3.

Thermal Protection

2.7.3.1.

Temperature Monitoring

2.7.3.2.

Thermal Shutdown

2.7.3.3.

2.8.

Gate Drive Circuits

2.8.1.

Drive Requirements

2.8.1.1.

2.8.1.2.

Current Capability

2.8.1.3.

Switching Speed

2.8.1.4.

Isolation Requirements

2.8.2.

MOSFET and IGBT Drivers

2.8.2.1.

Bootstrap Circuits

2.8.2.2.

Isolated Drivers

2.8.2.3.

High-Side and Low-Side Drivers

2.8.2.4.

Dead-Time Generation

2.8.3.

Thyristor Drivers

2.8.3.1.

Pulse Transformers

2.8.3.2.

Optocoupler Circuits

2.8.3.3.

Gate Protection

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